陈继新

学习经历：

2002/04 – 2006/01：东南大学，博士

2000/09 – 2002/03：东南大学，硕士

1994/09 – 1998/08：东南大学，本科

工作经历:

2021/01 – 至今：东南大学首席教授

2016/10 – 至今：电磁场与微波工程系主任

2006/04 – 至今：东南大学，信息科学与工程学院，讲师、副教授、教授

1998/09 – 2000/08：东南大学，无线电工程系，助研

教授课程：

1.   本科生课程：微波器件原理和芯片设计

2.   研究生课程：微波毫米波电路集成新技术

研究方向：

1.   毫米波亚毫米波理论与技术

2.   无线通信系统中的射频与天线技术

3.   微波毫米波电路与系统

论文情况：

近年主要论文

[1] Jiayang Yu, Jixin Chen et al., A 211-to-263-GHz Dual- LC   -Tank-Based Broadband Power Amplifier With 14.7-dBm P SAT and 16.4-dB Peak   Gain in 130-nm SiGe BiCMOS,IEEE Journal of Solid-State Circuits. Early Access Article. 2022

[2] Huanbo Li, Jixin Chen et al., W-band Scalable 2×2 Phased-Array   Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate   Communication, IEEE Journal of Solid-State Circuits, vol. 57,   no. 9, 2022, pp. 2685-2701

[3] Peigen Zhou, Jixin Chen et al., A −28.5-dB EVM 64-QAM 45-GHz   Transceiver for IEEE 802.11aj, IEEE Journal of Solid-State Circuits,   vol. 56, no. 10, 2021, pp. 3077-3093

[4] Jiayang, Yu, Jixin Chen et al., A 300-GHz Transmitter Front   End With -4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm   SiGe BiCMOS Technology, IEEE Transactions on Microwave Theory and   Techniques, vol. 69, no. 11, 2021, pp. 4925-4936

[5]. Zekun. Li, Jixin Chen et al., A 24-30-GHz TRX Front-End With   High Linearity and Load-Variation Insensitivity for mm-Wave 5G in 0.13-μm   SiGe BiCMOS, IEEE Transactions on Microwave Theory and Techniques, vol.   69, no. 10, 2021, pp. 4561-4575

[6] Peigen Zhou, Jixin Chen et al., “A 150- GHz Transmitters With 12-dBm   Peak Output Power Using 130-nm SiGe:C BiCMOS Process” IEEE Transactions on   Microwave Theory and Techniques, vol. 68, no. 7, 2020, pp. 3056-3067

[7] Huanbo Li, Jixin Chen et al., “A 250- GHz Differential SiGe   Amplifier With 21.5-dB Gain for Sub-THz Transmitters,” IEEE Transactions   on Terahertz Science and Technology, vol. 10, no. 6, 2020, pp. 624-633

[8] Peigen Zhou, Jixin Chen et al., “A 273.5-312-GHz Signal Source With   2.3 dBm Peak Output Power in a 130-nm SiGe BiCMOS Process” IEEE   Transactions on Terahertz Science and Technology, vol. 10, no. 3, 2020, pp.   260-270

[9] Peigen Zhou, Jixin Chen et al., An E-Band SiGe High   Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide   Temperature Operating Range, in IEEE Transactions on Circuits and   Systems I: Regular Papers, vol. 69, no. 3, 2022, pp. 1041-1050

[10] Chao Chen, Jixin Chen, Wei Hong, Differentially Fed   Dual-Polarized 2-D Multibeam Dielectric Resonator Antenna Array Based on   Printed Ridge Gap Waveguide, in IEEE Transactions on Antennas and   Propagation, vol. 70, no. 9, 2022, pp. 7967-7977

[11] Haoyi Dong, Jixin Chen, et al., A Low-Loss Fan-Out   Wafer-Level Package With a Novel Redistribution Layer Pattern and Its   Measurement Methodology for Millimeter-Wave Application, in IEEE   Transactions on Components, Packaging and Manufacturing Technology, vol. 10,   no. 7, 2020, pp. 1073-1078

[12] Huanbo Li, Jixin Chen et al., A W-Band 6-Bit Phase Shifter   With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS, in IEEE   Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 10, 2020,   pp. 1839-1843

[13] Huanbo Li, Jixin Chen et al.,  A High-Linearity Adaptive-Bias SiGe   Power Amplifier for 5G Communication, in IEEE Transactions on Circuits   and Systems II: Express Briefs, vol. 68, no. 8, 2021, pp. 2770-2774

[14] Long Wang, Jixin Chen et al.,  A Variable Gain Power Amplifier Based   on Switched-Capacitor Array With Stable Linearity, in IEEE Transactions   on Circuits and Systems II: Express Briefs, vol. 69, no. 2, 2022, pp. 289-293

[15] Peigen Zhou, Jixin Chen et al., A Broadband Power Amplifier   in 130-nm SiGe BiCMOS Technology, in IEEE Solid-State Circuits Letters,   vol. 4, 2021, pp. 44-47

[16] Zekun. Li,, Jixin Chen, et al., A 220-GHz Power Amplifier   With 22.5-dB Gain and 9-dBm Psat in 130-nm SiGe, in IEEE Microwave and   Wireless Components Letters, vol. 31, no. 10, 2021, pp. 1166-1169

[17] H. Li, J. Chen, D. Hou, Z. Li, P. Zhou and W. Hong, A 230-GHz   SiGe Amplifier With 21.8-dB Gain and 3-dBm Output Power for Sub-THz   Receivers, in IEEE Microwave and Wireless Components Letters, vol. 31,   no. 8, 2021, pp. 1004-1007

[18] Zekun. Li, Jixin Chen et al., A 220 GHz Sliding-IF Quadrature   Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe   BiCMOS, 2022 IEEE Custom Integrated Circuits Conference (CICC), Newport   Beach, CA, USA, 2022, pp. 1-2.

[19] Huanbo Li, Jixin Chen et al.,  A 94GHz Scalable 2 × 2 Phased-Array   Receiver in SiGe BiCMOS for High Data-Rate Communication, 2021 IEEE   Custom Integrated Circuits Conference (CICC), Austin, TX, USA, 2021, pp. 1-2.

[20] Jiayang, Yu, Jixin Chen et al.,  A 212–260 GHz Broadband Frequency   Multiplier Chain (×4) in 130-nm BiCMOS Technology, 2021 IEEE MTT-S   International Microwave Symposium (IMS), Atlanta, GA, USA, 2021, pp. 454-457.

[21] Peigen Zhou, Jixin Chen et al., A 64-QAM 45-GHz SiGe   Transceiver for IEEE 802.11aj, 2020 IEEE Radio Frequency Integrated   Circuits Symposium (RFIC), Los Angeles, CA, USA, 2020, pp. 167-170.

[22] Peigen Zhou, Jixin Chen et al., A 77-GHz Fully Integrated   Power Amplifier for Automotive Radar Application in 40-nm CMOS, 2021   IEEE MTT-S International Wireless Symposium (IWS), Nanjing, China, 2021, pp.   1-3.

[23] Peigen Zhou, Jixin Chen et al., Analysis and Design of D-band   High Output Power Signal Sources in 130-nm SiGe BiCMOS Process, 2021   IEEE MTT-S International Wireless Symposium (IWS), Nanjing, China, 2021, pp.   1-3.

[24] Zekun. Li, Jixin Chen et al., A Wide-Bandwidth W-Band LNA in   GaAs 0.1 μm pHEMT Technology, 2020 IEEE MTT-S International Wireless   Symposium (IWS), Shanghai, China, 2020, pp. 1-3.